Ameur, KheiraMazari, H.Benseddik, N.Benamara, Z.Benyahya, N.Boumesjed, A.2023-09-102023-09-1020182170-161X2588-2082http://hdl.handle.net/123456789/15329We report on the photovoltaic characteristics of solar cells based on GaAs1-xNx grown on gallium arsenide. The GaAsN is a recently developed novel solar cell material for its promising tunable band gap of 1.42 eV to 3.4 eV for the realization of high efficiency solar cells. We have conducted numerical simulation of GaAs1-xNx single junction solar cell. The doping density, layer thickness, and the stoichiometric coefficient are investigated for optimized performance of solar cell under solar illumination of AM1.5G. Thus starting from I-V curves, we have calculated the short-circuit current ICC, the open-circuit voltage VOC and the efficiency conversion. This structure can also provide a fundamental solar cell unit for developing very high efficiency MQW solar cell.enGaAsNSolar cellConversion efficiencyArticle