2022-04-282022-04-282015148–155http://hdl.handle.net/123456789/13061The effectsofpointdefects,hydrogen,andgrowthconditionsontheelectronicstructure and propertiesofthe(Al,N)codopedp-typeZnOhavebeeninvestigatedusingthefirst principlesmethod.TheobtainedresultsshowedthattheAlZn–NO–VZn complexisa shallowacceptorthatcanplayanimportantroleinachievingthep-typeconductivityin the (Al,N)codopedZnOfilms.Ourresultsshowedalsothattheelectricalconductivitytype in the(Al,N)codopedZnOfilmsstronglydependsonthedonor/acceptorconcentrations ratio. ThecodopedZnOfilmspreparedunderbothZn-richandO-richgrowthconditions withadonors/acceptorsratioof1:2haveap-typeconductivity,whilethosepreparedwith a ratioof1:1cannotbep-typeunlessiftheyarepreparedunderO-richconditions.The achievedp-typequalitydependsalsoontheusednitrogendopingsource.Toprepare p-typeZnOfilmofhighqualityusingthe(Al,N)codopingmethod,theuseofNOorNO2 is recommended.Thepresenceofdonordefectssuchasoxygenvacanciesandhydrogenwill significantlyaffecttheelectronicpropertiesofthe(Al,N)codopedZnOfilms,andifthe concentrationofthesedefectsinthesampleishighenough,thematerialcanbeeasily convertedton-type.enZnOHydrogenFirst-principlesp-TypeVacancyArticle