Boudine, A.Benhizia, K.Kalla, L.2023-09-172023-09-1720112170-161X2588-2082http://hdl.handle.net/123456789/15921In this paper, we study two-dimensional spin polarized transport in semiconductors. Based on the some semiclassical considerations and taking account of the spin relaxation. We determined the relationship of the polarization as a function of time and the distance. And we have also established the relationship of the drain current in a 2D channel of a transistor called "spin-FET" where it was matter to highlight this type of transport. This study was crowned with a numerical study of the characteristics of spinFET 2D transistor depending on the external field and internal characteristics of the semiconductor.enSpin polarized transportspintronicspinfetSemiconducteurArticle