Kourdi, ZakaryaBouazza, BenyounesGuen-bouazza, AhlemKhaouani, Mohamed2023-09-112023-09-1120152170-161X2588-2082http://hdl.handle.net/123456789/15547In this paper, we present a simulation results of the design and characterization for GaN double-gate transistor, that has T-gate geometries with high-electron-mobility to realize high performance using silvaco TCAD Software, this transistor is used for amplifiers application. We have obtained an excellent current density, almost 817mA/mm, a peak extrinsic transconductance of 915mS/mm at VDS=2 V, and cutting frequency cutoffs of 878 GHz, and maximum frequency of 982 GHz. KeywordsenHEMTGaNPower applicationTcad-SilvacoArticle