Rechem, Dj.Benkara, S.Lamamra, K.2023-09-172023-09-1720112170-161X2588-2082http://hdl.handle.net/123456789/15930Using a two-dimensional (2-D) simulation, we study the impact of varying the nanotube diameter and gate oxide thickness on the performance of a ballistic nanoscale carbon nanotube field effect transistor (CNTFET). Our results show that the nanotube diameter influences the ION/IOFF current ratio; the drain induced barrier lowering (DIBL), the subthreshold slop as well as transconductance and drain conductance. We also show that these device characteristics are affected by the gate oxide thickness. Thus, nanotube diameter and gate oxide thickness must be carefully taken into account when designing robust logic circuits based on CNTFETs with potentially high parameter variability.enCarbon nanotubeField- effect transistorBallisticCarbon nanotube diameterGate oxide thicknessArticle