Lamrani, S .Guittoum, A.Hadjersi, T.Bouanik, S.Mebarki, M.Benbrahim, N.2023-09-182023-09-1820142170-161Xhttp://hdl.handle.net/123456789/16075Perpendicular Silicon nanowires (SiNWs), having 20 micrometer in length, were fabricated by metal assisted chemical etching of n-type Si(100) wafers in aqueous HF-solution. In a second step, NiFe films were electrodeposited onto theses SiNWs. The structure and magnetic properties of as deposited NiFe layers were studied by X ray diffraction (XRD) and vibrating sample magnetometer (VSM). From X-ray diffraction, the FCC NiFe structure was evidenced with a lattice constant, a, equal to 3.5270 Å. From hysteresis curves, we compute the coercive field, Hc, values. We found that the Hc // values range from 102 Oe to 236 Oe.Silicon nanowiresMagnetic propertiesNiFe layerArticle