Mazari, HalimaAmeur, K.Khelifi, R.Mansouri, S.Benseddik, N.Benamara, Z.Boumesjed, A.Benyahya, N.Marie, P.Ruterana, P.Monnet, I.Bluet, J. M.Bechare, R.2023-09-102023-09-1020182170-161X2588-2082http://hdl.handle.net/123456789/15314In this paper, we have studied Au/n-GaN freestanding Schottky structures. The growth technique of GaN used is the HVPE (Hybrid Vapor Phase Epitaxy) method. The frequency dependent capacitance–voltage (C–V–f) and conductance–voltage (G–V–f) characteristics of Au/n-GaN freestanding/Ag Schottky diodes has been investigated in the frequency range of 100 Hz–1MHz at room temperature. The higher values of C and G at low frequencies were attributed to the native oxide layer thickness and surface states. From the C–f and G–f characteristics, the energy distribution of surface states (Nss) and their relaxation time (s) have been determined in the energy range of (Ec-0.648) eV– (Ec-1.35) eV taking into account the forward bias I–V data. The values of Nss and ss change from 6.18×1013 eV-1 cm-2 to 9.37×1012 eV-1 cm-2 and 6.3×10-4 s to 3.6×10-7 s, respectively.enC-G-f characteristicsGallium nitride freestandingSchottky structureNss, ssArticle