Mentar, LoubnaGhezali, K.Boudine, B.Azizi, A.2023-09-102023-09-1020182170-161X2588-2082http://hdl.handle.net/123456789/15353In the last few years, metal oxides nanostructures have attracted quickly increasing attention, due to their very interesting properties .Among them, Zinc sulfide (ZnS) semiconductor is an appropriate candidate as window or buffer layer in solar cells applications. ZnS thin films were prepared at room temperature by electrochemical deposition using zinc sulfate and sodium thiosulfate solution at pH 2.7. In this paper, we investigated the influence of the concentration of zinc sulfate on structural, morphological and optical properties for ZnS thin films electrodeposits. SEM images demonstrated that the morphology of ZnS thin films depend greatly on the intial concentration of ZnSO4. XRD studies confirmed the presence of zinc blende structure. The optical measurements (UV-Vis) show a large band gap between 3.4 –3.9 eV depending on the concentration of zinc sulfate.enthin filmsZnSband gapcarrier densitynanostructuresArticle