Optimization Of A Gaasn Ternary Alloy Based Solar Cell For High Efficiency

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dc.contributor.authorAmeur, Kheira
dc.contributor.authorMazari, H.
dc.contributor.authorBenseddik, N.
dc.contributor.authorBenamara, Z.
dc.contributor.authorBenyahya, N.
dc.contributor.authorBoumesjed, A.
dc.date.accessioned2023-09-10T06:50:04Z
dc.date.available2023-09-10T06:50:04Z
dc.date.issued2018
dc.description.abstractWe report on the photovoltaic characteristics of solar cells based on GaAs1-xNx grown on gallium arsenide. The GaAsN is a recently developed novel solar cell material for its promising tunable band gap of 1.42 eV to 3.4 eV for the realization of high efficiency solar cells. We have conducted numerical simulation of GaAs1-xNx single junction solar cell. The doping density, layer thickness, and the stoichiometric coefficient are investigated for optimized performance of solar cell under solar illumination of AM1.5G. Thus starting from I-V curves, we have calculated the short-circuit current ICC, the open-circuit voltage VOC and the efficiency conversion. This structure can also provide a fundamental solar cell unit for developing very high efficiency MQW solar cell.ar
dc.identifier.issn2170-161X
dc.identifier.issn2588-2082
dc.identifier.urihttp://hdl.handle.net/123456789/15329
dc.language.isoenar
dc.publisherOum-El-Bouaghi Universityar
dc.subjectGaAsNar
dc.subjectSolar cellar
dc.subjectConversion efficiencyar
dc.titleOptimization Of A Gaasn Ternary Alloy Based Solar Cell For High Efficiencyar
dc.typeArticlear
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