The Barrier Height And The Series Resistance Of Ag/sno2/si/au Schottky Diode Determined By Cheung And Lien Methods
| dc.contributor.author | Benhaliliba, Mostefa | |
| dc.date.accessioned | 2023-09-11T10:09:54Z | |
| dc.date.available | 2023-09-11T10:09:54Z | |
| dc.date.issued | 2015 | |
| dc.description.abstract | Electronic parameters of Ag/SnO2 /Si/Au Schottky diode (SD) determined by Cheung and Lien methods are extracted using the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. Such SD is fabricated by the spray pyrolysis and the metallic contact is achieved by thermal evaporation process in vacuum. To determine more parameters of SD, the quantities like dV/dlnI, H(I) and Ga(V) are introduced. The non-ideal behavior of SD is confirmed, n=4.86 (n>1), the barrier height FB and the series resistance Rs are found to be 0.62 V and 585 Ω (by dV/dlnI), 524.5Ω (by H(I). The use of C-V and C-²-V plots allow us to determine the density of acceptor (Na) and diffusion potential (Vd), at a kept frequency of 1MHz, of 7.8 1021 cm-3 and 0.49 V respectively. The profile of C-V, measured at various frequencies, reveals a p type of as fabricated SD where tin oxide layer is doped with 4% indium. | ar |
| dc.identifier.issn | 2170-161X | |
| dc.identifier.issn | 2588-2082 | |
| dc.identifier.uri | http://hdl.handle.net/123456789/15563 | |
| dc.language.iso | en | ar |
| dc.publisher | Oum-El-Bouaghi University | ar |
| dc.subject | Tin oxide | ar |
| dc.subject | Indium doping | ar |
| dc.subject | Spray pyrolysis | ar |
| dc.subject | Schootky diode | ar |
| dc.subject | Ideality factor | ar |
| dc.subject | I-V measurement | ar |
| dc.subject | C-V characteristics | ar |
| dc.title | The Barrier Height And The Series Resistance Of Ag/sno2/si/au Schottky Diode Determined By Cheung And Lien Methods | ar |
| dc.type | Article | ar |