Mosfets Modeling Using Artificial Neural Network
| dc.contributor.author | Salmi, Mohamed | |
| dc.contributor.author | Fridja, D. | |
| dc.contributor.author | Bella Baci, A. | |
| dc.contributor.author | Al-Douri, Y. | |
| dc.date.accessioned | 2023-09-10T09:54:11Z | |
| dc.date.available | 2023-09-10T09:54:11Z | |
| dc.date.issued | 2018 | |
| dc.description.abstract | The invention of the transistor in 1948 launched a real technological revolution that continues today there are two families of transistors responding to different operating principles: the bipolar transistors invented in 1984. But they are considered as an old technology. A type of transistors derived the field effect transistors (MOSFET), dominate today and more useful than the bipolar. The current technology needs an intelligence technique, modeling of electronic components by artificial neural network. Our work within this framework, as it presents to us a first step in exploiting the principles fantastic techniques of artificial intelligence in the field of modeling and simulation of electronic components such as MOSFETs. | ar |
| dc.identifier.issn | 2170-161X | |
| dc.identifier.issn | 2588-2082 | |
| dc.identifier.uri | http://hdl.handle.net/123456789/15382 | |
| dc.language.iso | en | ar |
| dc.publisher | Oum-El-Bouaghi University | ar |
| dc.subject | MOSFETs | ar |
| dc.subject | Artificial Neural Networks | ar |
| dc.subject | Modeling | ar |
| dc.title | Mosfets Modeling Using Artificial Neural Network | ar |
| dc.type | Article | ar |