The effectofgrowthconditions,pointdefectsandhydrogen on theelectronicstructureandpropertiesofp-type(Al,N) codopedZnO

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dc.date.accessioned2022-04-28T02:59:30Z
dc.date.available2022-04-28T02:59:30Z
dc.date.issued2015
dc.description.abstractThe effectsofpointdefects,hydrogen,andgrowthconditionsontheelectronicstructure and propertiesofthe(Al,N)codopedp-typeZnOhavebeeninvestigatedusingthefirst principlesmethod.TheobtainedresultsshowedthattheAlZn–NO–VZn complexisa shallowacceptorthatcanplayanimportantroleinachievingthep-typeconductivityin the (Al,N)codopedZnOfilms.Ourresultsshowedalsothattheelectricalconductivitytype in the(Al,N)codopedZnOfilmsstronglydependsonthedonor/acceptorconcentrations ratio. ThecodopedZnOfilmspreparedunderbothZn-richandO-richgrowthconditions withadonors/acceptorsratioof1:2haveap-typeconductivity,whilethosepreparedwith a ratioof1:1cannotbep-typeunlessiftheyarepreparedunderO-richconditions.The achievedp-typequalitydependsalsoontheusednitrogendopingsource.Toprepare p-typeZnOfilmofhighqualityusingthe(Al,N)codopingmethod,theuseofNOorNO2 is recommended.Thepresenceofdonordefectssuchasoxygenvacanciesandhydrogenwill significantlyaffecttheelectronicpropertiesofthe(Al,N)codopedZnOfilms,andifthe concentrationofthesedefectsinthesampleishighenough,thematerialcanbeeasily convertedton-type.ar
dc.identifier.issn148–155
dc.identifier.urihttp://hdl.handle.net/123456789/13061
dc.language.isoenar
dc.publisherElsevierar
dc.subjectZnOar
dc.subjectHydrogenar
dc.subjectFirst-principlesar
dc.subjectp-Typear
dc.subjectVacancyar
dc.titleThe effectofgrowthconditions,pointdefectsandhydrogen on theelectronicstructureandpropertiesofp-type(Al,N) codopedZnOar
dc.title.alternativeA firstprinciplesstudyar
dc.typeArticlear
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