Spin polarized transport in semiconductor
| dc.contributor.author | Boudine, A. | |
| dc.contributor.author | Benhizia, K. | |
| dc.contributor.author | Kalla, L. | |
| dc.date.accessioned | 2023-09-17T07:26:25Z | |
| dc.date.available | 2023-09-17T07:26:25Z | |
| dc.date.issued | 2011 | |
| dc.description.abstract | In this paper, we study two-dimensional spin polarized transport in semiconductors. Based on the some semiclassical considerations and taking account of the spin relaxation. We determined the relationship of the polarization as a function of time and the distance. And we have also established the relationship of the drain current in a 2D channel of a transistor called "spin-FET" where it was matter to highlight this type of transport. This study was crowned with a numerical study of the characteristics of spinFET 2D transistor depending on the external field and internal characteristics of the semiconductor. | ar |
| dc.identifier.issn | 2170-161X | |
| dc.identifier.issn | 2588-2082 | |
| dc.identifier.uri | http://hdl.handle.net/123456789/15921 | |
| dc.language.iso | en | ar |
| dc.publisher | Oum-El-Bouaghi University | ar |
| dc.subject | Spin polarized transport | ar |
| dc.subject | spintronic | ar |
| dc.subject | spinfet | ar |
| dc.subject | Semiconducteur | ar |
| dc.title | Spin polarized transport in semiconductor | ar |
| dc.type | Article | ar |