Irradiance And Temperature Impact On Thin Film Materials I-v Curves

dc.contributor.authorHaloui, Hafsia
dc.contributor.authorTouafek, Khaled
dc.contributor.authorZaabat, Mourad
dc.date.accessioned2023-09-13T07:38:14Z
dc.date.available2023-09-13T07:38:14Z
dc.date.issued2013
dc.description.abstractThe thin-film solar cells are becoming increasingly used in various applications; this is mainly due to the continued high cost of mono or polycrystalline silicon. In addition, the thin film technology offers the most diverse applications including uses low solar irradiance. The main fields of thin film solar cells are: the chain of amorphous silicon (a-Si), the chain of cadmium telluride (CdTe) and chalcopyrite sector (CIS and CIGS material). In this paper, a study on the influence of light and temperature on the characteristics I (V) of different thin film photovoltaic cells (a-Si:H single, a-Si:H tandem a-Si:H tripple, CdTe and CIS) is detailed. Under standard conditions (illumination of 1000W/m2 and cell temperature 25° C), we see that the CdTe is the closest that the monocrystalline silicon which has a maximum value of short circuit current material (3,26A).ar
dc.identifier.issn2170-161X
dc.identifier.issn2588-2082
dc.identifier.urihttp://hdl.handle.net/123456789/15702
dc.language.isoenar
dc.publisherOum-El-Bouaghi Universityar
dc.subjectThin filmsar
dc.subjectEfficiencyar
dc.subjectElectricityar
dc.subjectirradiancear
dc.subjecttemperaturear
dc.titleIrradiance And Temperature Impact On Thin Film Materials I-v Curvesar
dc.typeArticlear
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