Substrate effect temperature on Cu2ZnSnS4 thin films deposited by ultrasonic technique
| dc.contributor.author | Daranfed, W. | |
| dc.contributor.author | Fassi, R. | |
| dc.contributor.author | Hafdallah, A. | |
| dc.contributor.author | Ynineb, F. | |
| dc.contributor.author | Attaf, N. | |
| dc.contributor.author | .Aida, M.S | |
| dc.contributor.author | Hadjeris, L. | |
| dc.contributor.author | Rinnert, H. | |
| dc.contributor.author | Bougdira, J. | |
| dc.date.accessioned | 2023-09-17T07:02:57Z | |
| dc.date.available | 2023-09-17T07:02:57Z | |
| dc.date.issued | 2011 | |
| dc.description.abstract | Cu2ZnSnS4 (CZTS) thin films are a potential candidate for absorber layer in thin film solar cells. CZTS films were deposited by spray ultrasonic technique. An aqueous solution composed of copper chloride, zinc acetate, tin chloride and thiourea like precursors is sprayed on heated glass substrates at various temperatures. The substrate temperature was changed from 280°C to 360°C in order to investigate its influence on CZTS films properties. The DRX analyses indicated that Cu2ZnSnS4 films have nanocrystalline structure with (112) preferential orientation and a crystalline size, ranged from 30 to 50 nm with increasing substrate temperature. The obtained films are composed of SnS, ZnO, ZnS and Cu2ZnSnS4 phases. The optical films characterization was carried by the measurement of UV-visible transmission. The optical gap was deduced from the absorption spectra. Broad emissions at around 1.27 eV was observed in the photoluminescence spectrum measured at 77 K. | ar |
| dc.identifier.issn | 2170-161X | |
| dc.identifier.issn | 2588-2082 | |
| dc.identifier.uri | http://hdl.handle.net/123456789/15906 | |
| dc.language.iso | en | ar |
| dc.publisher | Oum-El-Bouaghi University | ar |
| dc.subject | CZTS | ar |
| dc.subject | photoluminescence | ar |
| dc.subject | thin films | ar |
| dc.subject | Transmission | ar |
| dc.subject | spray technique | ar |
| dc.subject | XRD | ar |
| dc.title | Substrate effect temperature on Cu2ZnSnS4 thin films deposited by ultrasonic technique | ar |
| dc.type | Article | ar |