Performance Study Of A Hemt For Power Application
| dc.contributor.author | Kourdi, Zakarya | |
| dc.contributor.author | Bouazza, Benyounes | |
| dc.contributor.author | Guen-bouazza, Ahlem | |
| dc.contributor.author | Khaouani, Mohamed | |
| dc.date.accessioned | 2023-09-11T09:22:57Z | |
| dc.date.available | 2023-09-11T09:22:57Z | |
| dc.date.issued | 2015 | |
| dc.description.abstract | In this paper, we present a simulation results of the design and characterization for GaN double-gate transistor, that has T-gate geometries with high-electron-mobility to realize high performance using silvaco TCAD Software, this transistor is used for amplifiers application. We have obtained an excellent current density, almost 817mA/mm, a peak extrinsic transconductance of 915mS/mm at VDS=2 V, and cutting frequency cutoffs of 878 GHz, and maximum frequency of 982 GHz. Keywords | ar |
| dc.identifier.issn | 2170-161X | |
| dc.identifier.issn | 2588-2082 | |
| dc.identifier.uri | http://hdl.handle.net/123456789/15547 | |
| dc.language.iso | en | ar |
| dc.publisher | Oum-El-Bouaghi University | ar |
| dc.subject | HEMT | ar |
| dc.subject | GaN | ar |
| dc.subject | Power application | ar |
| dc.subject | Tcad-Silvaco | ar |
| dc.title | Performance Study Of A Hemt For Power Application | ar |
| dc.type | Article | ar |