Study Of Algan/gan Mos-hemts With Tio2 Gate Dielectric And Regrown Source/drain
| dc.contributor.author | Touati, Zineeddine | |
| dc.contributor.author | Hamaizia, Zahra | |
| dc.contributor.author | Messai, Zitouni | |
| dc.date.accessioned | 2023-09-10T07:16:12Z | |
| dc.date.available | 2023-09-10T07:16:12Z | |
| dc.date.issued | 2018 | |
| dc.description.abstract | In This work, we propose a novel TiO2/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with 60 nm gate-length and high-k TiO2 gate dielectric. The DC and RF characteristics of the proposed AlGaN/GaN MOS-HEMT structure are analyzed by using TCAD Silvaco Software. The present TiO2/AlGaN/GaN MOS-HEMT design has shown maximum extrinsic transconductance gm of 198.3 mS/mm, saturated IDS density at VGS = 4 V of 668.4 mA/mm, maximum IDS density of 677.9 mA/mm, unity-gain cut-off frequency (ft) of 229.8 GHz, and with a record maximum oscillation frequency fmax of 627.8 GHz. The Power performance characterized at 10 GHz to give output power (Pout) of 22.3 dBm, power gain of 13.1 dB, and power-added efficiency (PAE) of 26.5%. | ar |
| dc.identifier.issn | 2170-161X | |
| dc.identifier.issn | 2588-2082 | |
| dc.identifier.uri | http://hdl.handle.net/123456789/15346 | |
| dc.language.iso | en | ar |
| dc.publisher | Oum-El-Bouaghi University | ar |
| dc.subject | TiO2/AlGaN/GaN | ar |
| dc.subject | MOS-HEMT | ar |
| dc.subject | high-k | ar |
| dc.subject | TiO2 | ar |
| dc.subject | Regrown Source/Drain | ar |
| dc.subject | SILVACO | ar |
| dc.title | Study Of Algan/gan Mos-hemts With Tio2 Gate Dielectric And Regrown Source/drain | ar |
| dc.type | Article | ar |