Effects of doping profile and temperature on the solar cell performances
| dc.contributor.author | Benchiheb, Asma | |
| dc.contributor.author | Benchiheb, Nedjoua | |
| dc.contributor.author | Saidi, Yasmina | |
| dc.date.accessioned | 2025-04-21T22:19:54Z | |
| dc.date.available | 2025-04-21T22:19:54Z | |
| dc.date.issued | 2021 | |
| dc.description.abstract | In this paper, an optimization of the structure of a silicon solar cell is presented. This study takes into account the effects of temperature and doping level of each region of the device. As the simulation with the COMSOL software allowed us to demonstrate the link between the technological structure of an N + NP type solar cell and the various characteristics and parameters obtained at the output when it is subjected to a polarization. Thus, we considered different doping levels and thicknesses of the N + layer. It has been observed that the effects of temperature are negligible for low doping levels of the N + layer. However, in heavy doping, the benefit of reducing its thickness below 0.018 μm is demonstrated, especially for the high temperature operating range. Concerning the base, we observed that its thickness must be maintained in the order of 100 μm. | |
| dc.identifier.uri | http://dspace.univ-oeb.dz:4000/handle/123456789/21974 | |
| dc.language.iso | en | |
| dc.publisher | University of Oum El Bouaghi | |
| dc.subject | Solar Cell; Optimization; Temperature | |
| dc.title | Effects of doping profile and temperature on the solar cell performances | |
| dc.type | Article |
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