A Study Of C(v) Characteristics Of Capacitors Containing High-k Oxides And High Mobility Carriers Semi-conductors
| dc.contributor.author | Merzougui, Amina | |
| dc.contributor.author | Latreche, Saida | |
| dc.contributor.author | Bouchekouf, Seloua | |
| dc.date.accessioned | 2023-09-11T09:45:56Z | |
| dc.date.available | 2023-09-11T09:45:56Z | |
| dc.date.issued | 2015 | |
| dc.description.abstract | In this work, we proceeded to the analysis of C(V) characteristics of MOS capacitors (Metal-oxide-semi-conductor) with metal gates. Within the framework of the search for new materials, we have studied C(V) characteristics of structures containing high permittivity oxide (high-k)- the HfO2 in our case- to replace the ultra-thin conventional oxide layer (SiO2 ) which reaches its physical and technological limits (less than 1 nm thickness). In these same structures, the stacking of grid is deposited on a substrate with high mobility carriers (electrons and holes). In fact: The germanium (Ge) and III-V materials [1]. The obtained results were largely compared with others simulated and experimental ones. | ar |
| dc.identifier.issn | 2170-161X | |
| dc.identifier.issn | 2588-2082 | |
| dc.identifier.uri | http://hdl.handle.net/123456789/15556 | |
| dc.language.iso | en | ar |
| dc.publisher | Oum-El-Bouaghi University | ar |
| dc.subject | MOS capacitors | ar |
| dc.subject | C(V) characteristics | ar |
| dc.subject | High permitivity | ar |
| dc.subject | High mobility carriers | ar |
| dc.subject | Schrodinger | ar |
| dc.title | A Study Of C(v) Characteristics Of Capacitors Containing High-k Oxides And High Mobility Carriers Semi-conductors | ar |
| dc.type | Article | ar |