Preparation and characterization of CdS thin films
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Date
2012
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
In this work we report the structural, optical and electrical properties of CdS thin films
prepared by chemical bath deposition (CBD) under the effect of solution temperatures. The
solution temperatures used vary between 55 and 75 °C. The XRD patterns show that the films
have a hexagonal phase with a preferential (002) orientation. The structural parameters such as
the grain size, dislocation density and strain are calculated. The transmission spectra, recorded in
the UV visible range, reveal a high transmission coefficient (85%) of the prepared films and an
optical band gap values of 2 - 2.4 eV. The electrical measurements show that the dark
conductivity values increase from 10-7 to 10-4 (Ω.cm)-1 at higher temperature (Ts > 65°C). It is
found that the photoconductivity of the deposited films is two to five decades larger than the dark
conductivity, and the photoconductivity to the dark conductivity ratio obtained at 3000 Lx vary
from 102 to 105. From these results we inferred that the elaborated CdS thin films exhibit good
properties intended for solar cell window layers.
Description
Keywords
Thin film, Chemical bath deposition, Photoconductivity, Solar cell