Numerical study and performance analysis of carbone nanotube field effect transistors
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Date
2013
Journal Title
Journal ISSN
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Publisher
Opatija, Croatia
Abstract
As transistors are scaled down to nanometers, the
theory and structure of nanometers devices such as carbon
nanotubes field effect transistors (CNTFET) are being
extensively studied. Self consistent solution of the Poisson
and Schrödinger equations is performed using the nonequilibrium
Green’s function (NEGF) formalism to
investigate the impact of nanotube diameter, gate oxide
thickness and high-k gate dielectric permittivity parameters
on the coaxially gate, n-type CNTFET. Our results show
that the nanotube diameter and gate oxide thickness
influences the ION/IOFF current ratio, the drain induced
barrier lowering (DIBL), the subthreshold slop as well as
transconductance and drain conductance. Furthermore, in
this work we focus on the impact of high-k gate dielectric
permittivity on the performance of CNTFETs. Using high-k
dielectric is caused by the enhancement in device
characteristics. A good agreement with numerical
simulation results is obtained.