Changes Of Thermal Conductivity,optical Conductivity, And Electric Conductivity Of Porous Silicon With Porosity

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dc.contributor.authorAlfeel, Faten
dc.contributor.authorAwad, Fowzi
dc.contributor.authorQamar, Fadi
dc.date.accessioned2023-09-13T07:11:53Z
dc.date.available2023-09-13T07:11:53Z
dc.date.issued2013
dc.description.abstractPorous silicon (PS) was prepared by electrochemical etching method. Mirage effect in transverse photothermal deflection PTD ( skimming configuration) was used to determine thermal conductivity the experimental results of PS thermal conductivity was compared with theoretical results they were almost the same. Optical extinction coefficient and absorption coefficient were calculated from transmittance T and reflectance R curve which measured with UV-Vis-NIR Spectrophotometer, and they were used to calculate the optical conductivity and electric conductivity from the Shankar and Joseph equations, and optical conductivity and electric conductivity were studied with porosity in porous silicon.ar
dc.identifier.issn2170-161X
dc.identifier.issn2588-2082
dc.identifier.urihttp://hdl.handle.net/123456789/15697
dc.language.isoenar
dc.publisherOum-El-Bouaghi Universityar
dc.subjectthermal conductivityar
dc.subjectoptical conductivityar
dc.subjectelectric conductivityar
dc.subjectporous siliconar
dc.subjectelectrochemical etchingar
dc.subjectporosityar
dc.subjectoptical extinction coefficientar
dc.subjectabsorption coefficientar
dc.subjectfilmar
dc.titleChanges Of Thermal Conductivity,optical Conductivity, And Electric Conductivity Of Porous Silicon With Porosityar
dc.typeArticlear
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