Effects of boron diffusion on titanium silicide formation

Simple item page
dc.contributor.authorKarboua, Houcine
dc.contributor.authorBoulakroune, M’hamed
dc.contributor.authorFortaki, Tarek
dc.date.accessioned2025-04-21T21:30:46Z
dc.date.available2025-04-21T21:30:46Z
dc.date.issued2021
dc.description.abstractSecondary ion mass spectrometry (SIMS) has been used to investigate Boron diffusion in Titanium silicide layers for several annealing conditions of duration and temperature. Experimental profiles were simulated using a model based on the famous Fick’s laws and the effect accompanying boron diffusion during silicidation like segregation and clustering. The comparison between simulation results and those of the literature in the same annealing conditions shows a good agreement between our results and those of other works. This explains that boron diffusion in titanium silicide depends on segregation, clustering and the solid solubility exceeds.
dc.identifier.urihttp://dspace.univ-oeb.dz:4000/handle/123456789/21968
dc.language.isoen
dc.publisherUniversity of Oum El Bouaghi
dc.subjectSIMS; Titanium Silicide; Boron; Simulation; Diffusion
dc.titleEffects of boron diffusion on titanium silicide formation
dc.typeArticle
Files
Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
Effects of Boron diffusion on Titanium silicide.pdf
Size:
215.49 KB
Format:
Adobe Portable Document Format
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
The 1 ST international conference on electronics, artificial intelligence and technologies ICEAINT 2021