Numerical Simulation Of Radiation Damage On The Device Performance Of Gaas Mesfets

dc.contributor.authorBeddiafi, Y.
dc.contributor.authorSaadoune, A.
dc.contributor.authorDehimi, L.
dc.date.accessioned2023-09-18T10:24:41Z
dc.date.available2023-09-18T10:24:41Z
dc.date.issued2014
dc.description.abstractIn this work, the effect of the radiation on the current-voltage characteristics of device GaAs metal Schottky field effect transistors (MESFET) at room temperature is investigated. Numerical Simulation tuned by means of a physics based device simulator. When the substrate of this transistor is subjected to radiations, structural defects, which are created, have undesirable effects and can degrade the performance of the transistors. These defects appear like deep traps. Results showed that in the presence of donor traps the current-voltage characteristics increases. However, acceptor traps have a significant effect on the current-voltage characteristics. In the presence of acceptor traps, the space charge zone in the channel increases, hence, reduces the current drainar
dc.identifier.issn2170-161X
dc.identifier.urihttp://hdl.handle.net/123456789/16091
dc.language.isoenar
dc.publisherOum-El-Bouaghi Universityar
dc.subjectSimulationar
dc.subjectDefectsar
dc.subjectSilvacoar
dc.subjectTrapsar
dc.subjectGaAsar
dc.titleNumerical Simulation Of Radiation Damage On The Device Performance Of Gaas Mesfetsar
dc.typeArticlear
Files
Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
Abstract.docx
Size:
11.99 KB
Format:
Microsoft Word XML
Description:
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description: