A Comprehensive Nonlinear Model For Gaas Mesfet Transistor
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Date
2013
Journal Title
Journal ISSN
Volume Title
Publisher
Oum-El-Bouaghi University
Abstract
An analytical two-dimensional (2D) model to accurately predict the channel potential and electric field distribution in sub-micron GaAs MESFET based on (2D) analytical solution of Poisson’s equation using superposition principle is presented. The results so obtained for current voltage characteristics, Transconductance and drain conductance, are presented and validated against both experimental I-V curves and various Models of the submicron MESFET GaAs. The model is then extended to predict the effects of parasitic resistances Rs and Rd, carriers mobility according to the electric fields and the edges effects on the performance. This model will allow more significant simulation of the component characteristics, with a precision improved for various conditions of Schottky barrier.
Description
Keywords
MESFET- GaAs, Submicrom nonlinear model, comparative study