Electrical Characterization Of Passivation Layers For P-type Multi Crystalline Silicon Ewt Solar Cells By Numerical Simulation
| dc.contributor.author | Benabadji, Batoul | |
| dc.contributor.author | Zerga, Abdellatif | |
| dc.contributor.author | Lachachi, Hanane | |
| dc.date.accessioned | 2023-09-11T06:54:13Z | |
| dc.date.available | 2023-09-11T06:54:13Z | |
| dc.date.issued | 2017 | |
| dc.description.abstract | In this study, the dielectric effects on solar cell efficiency were investigated. Different materials, such as Al2O3, HfO2, TiO2 and SiO2, were deposited by various techniques on the front side of a p-type EWT (Emitter Wrap Through) multi crystalline silicon (mc-Si) solar cell. The passivated layer thickness was optimized using the software Matlab. The recombination velocities utilized in the simulation were taken from the literature. Using the software TCAD (2D) Silvaco/Atlas, the best results (for electrical parameters) were achieved with TiO2 (refractive index n = 2.6 at λ= 620 nm) for a thickness of 5 nm; a solar cell efficiency around 20.5% was obtained | ar |
| dc.identifier.issn | 2170-161X | |
| dc.identifier.issn | 2588-2082 | |
| dc.identifier.uri | http://hdl.handle.net/123456789/15477 | |
| dc.language.iso | en | ar |
| dc.publisher | Oum-El-Bouaghi University | ar |
| dc.subject | p-type EWT mc-Si solar cell | ar |
| dc.subject | passivation layers | ar |
| dc.subject | reflectivity | ar |
| dc.subject | absorption | ar |
| dc.subject | simulation | ar |
| dc.subject | Silvaco/Atlas | ar |
| dc.title | Electrical Characterization Of Passivation Layers For P-type Multi Crystalline Silicon Ewt Solar Cells By Numerical Simulation | ar |
| dc.type | Article | ar |