Numerical analysis of GaAs MESFETs OPFET
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Date
2011
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Publisher
Oum-El-Bouaghi University
Abstract
A Tow dimensional numerical model of channel potential for GaAs MESFET (Metal semiconductor field effect transistor) doped uniformly .the model takes into acount the effects in channel region considering both the photoconductive effect and photovoltaic effect at the gate schottky . the 2-D potential distribution function in the active layer of the divice is solved numerically under dark and illumination condition.
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Keywords
2-D modeling potential distribution, Photodetector, Photovoltage