Comparative Study Of Transistors Electrical Characteristics Made In Bicmos Technology
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Date
2019
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Oum-El-Bouaghi University
Abstract
In this paper, a comparative study of two bipolar transistors realized according to the same BICMOS-0.35 technology, but with two different architectures (self-aligned and quasi-self-aligned) is presented. In each case, the type of material forming the base and the geometric differences existing between the two considered structures are taken into account. The simulation allowed us to demonstrate the interest in introducing germanium in quasi-self-aligned bipolar transistors. In addition, it has been found that in low and medium injection, the electrical characteristics of the self-aligned bipolar transistor deviate greatly from the experimental results. With the quasi-self-aligned architecture, this gap remains moderate. In strong injection, and in both types of transistors, the electrical characteristics are very close to those obtained experimentally. copyright 03.03.2019
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Keywords
Heterojunction, BICMOS, SiGe, Modelling