Browsing by Author "Sebais, M."

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    Fabrication, structural and optical characterization of In doped ZnO thin films prepared by the colloidal method
    (Oum-El-Bouaghi University, 2014) Medjaldi, M.; Touil, O.; Zaabat, M.; Boudine, B.; Halimi, O.; Sebais, M.
    Regarding to the excellent conductivity and high transparency in the visible range, the zinc oxide (ZnO) films have been widely used as transparent electrodes in optoelectronic devices, ZnO is a direct wide band-gap (3.37 eV) semiconductor. The conductivity of ZnO will be largely enhanced by doping little In, but it still keeps high transparency. So, IZO film has been widely investigated and is considered to be a promising possible alternative to ITO films. This work consist to the fabrication and characterization of ZnO:In thin films. The sample preparation was carried out by the colloidal method. The pure and In doped ZnO thin films were deposited using a dip-coating technique on glass matrix. The optimal condition for samples fabrication has been investigated. The XRD and Raman characterizations show that the ZnO thin film crystallize with a wurtzite structure. The optical properties of ZnO thin films doped In reveal that doping changes the optical gap of ZnO.
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    Structural And Optical Properties Of Cdse Doped Kcl Single Crystal
    (Oum-El-Bouaghi University, 2012) Bouhdjer, L.; Addala, S.; Chala, A.b.; Halimi, O.; Boudine, B.; Sebais, M.; Kara, S.
    Undoped and doped KCl single crystals by CdSe nanocrystals (NCs) have been grown by Czochralski (CZ) method with pulling rates in the 8-10 mm/h range. The crystals thus obtained were cleaved into samples of required size. The structural investigation of these samples has been deduced from Ө-2Ө (XRD) and Raman spectroscopy. The nano-size of CdSe aggregates in KCl host determined from XRD measurements by using the Sheerer formula. The Raman spectroscopy presented the LO mode vibration relative of (Cd-Se) chemical liaison. Moreover, the results of the optical absorption and photoluminescence spectra confirmed the nano-size of CdSe aggregates were observed band absorption located at 622,5nm relative of electronic transition 1se-1s3/2 of CdSe, with a blue shift from the bulk gap of ΔEg=0,26eV (Eg (CdSe) bulk=1,73eV), while the photoluminescence showed a band situated at 643, 55 nm, with displacement Eg towards the short wavelength (blue shift), this bleu shift due to the nanometric size of CdSe aggregates.