Browsing by Author "Saadoune, A."

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    Extraction Of Important Parameters Of A Silicon Diode Used As Particles Detector
    (Oum-El-Bouaghi University, 2012) Saadoune, A.; Dehimi, L.; Sengouga, N.; Terghini, W.; Megherbi, M.L.
    The Capacitance-Voltage characteristics (C-V) and the resistivity (ρ) of a p+nn+ silicon diode used as a particle detector is numerically simulated using the finite difference method. These characteristics permit to extract the important and useful parameters for the design of a detector diode used in a harsh environment and subjected to strong fluencies, such as the depletion voltage (Vdep), the effective concentration and the maximum resistivity, the reduction rate of the donors (c) and the introduction rate of defects (g). When this junction is subjected to strong radiations, physical defects which are created in the semiconductor lattice have undesirable effects and can degrade the performance of the detectors. These defects behave like deep levels and/or generation recombination (g-r) centres. The depletion voltage and the effective concentration were calculated by using C-V characteristic. The evolution of the effective density in function with the density of traps acceptor led as to find the redaction rate of the donors (c) and the introduction rate (β). The resistivity increases with increasing of the deep acceptor density to achieve the intrinsic resistivity (maximum).
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    Numerical Simulation Of Radiation Damage On The Device Performance Of Gaas Mesfets
    (Oum-El-Bouaghi University, 2014) Beddiafi, Y.; Saadoune, A.; Dehimi, L.
    In this work, the effect of the radiation on the current-voltage characteristics of device GaAs metal Schottky field effect transistors (MESFET) at room temperature is investigated. Numerical Simulation tuned by means of a physics based device simulator. When the substrate of this transistor is subjected to radiations, structural defects, which are created, have undesirable effects and can degrade the performance of the transistors. These defects appear like deep traps. Results showed that in the presence of donor traps the current-voltage characteristics increases. However, acceptor traps have a significant effect on the current-voltage characteristics. In the presence of acceptor traps, the space charge zone in the channel increases, hence, reduces the current drain