Browsing by Author "Rechem, Djamil"

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    Numerical study and performance analysis of carbone nanotube field effect transistors
    (Opatija, Croatia, 2013) Rechem, Djamil; Benkara, Salima; Lamamra, Kheireddine
    As transistors are scaled down to nanometers, the theory and structure of nanometers devices such as carbon nanotubes field effect transistors (CNTFET) are being extensively studied. Self consistent solution of the Poisson and Schrödinger equations is performed using the nonequilibrium Green’s function (NEGF) formalism to investigate the impact of nanotube diameter, gate oxide thickness and high-k gate dielectric permittivity parameters on the coaxially gate, n-type CNTFET. Our results show that the nanotube diameter and gate oxide thickness influences the ION/IOFF current ratio, the drain induced barrier lowering (DIBL), the subthreshold slop as well as transconductance and drain conductance. Furthermore, in this work we focus on the impact of high-k gate dielectric permittivity on the performance of CNTFETs. Using high-k dielectric is caused by the enhancement in device characteristics. A good agreement with numerical simulation results is obtained.
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    Study Of Different Parameters Effects On Threshold Voltage Of Cntfet
    (Oum-El-Bouaghi University, 2018) Khial, Aicha; Rechem, Djamil; Lagraf, F.; Azizi, C.
    In this paper, we have studied the effect of different parameters on threshold voltage of CNTFET devices using a numerical model developed with the Non-Equilibrium Greens Function approach in real space. In fact the work in hand involves the V_TH as a function of length gate taken from 10 nm to 30 nm for different temperature namely : 77 K, 150 K, 300 K, 400 K. then the variation of V_TH as a function of the nanotube diameter varying over the following chiralities : (13, 0), (16, 0), (19,0), (23, 0), (25, 0) was undertaken. Afterworlds, we conducted the variation of V_TH as a function of the oxide thickness with the values: 1.5 nm, 3 nm, 4.5 nm, 6 nm and 7 nm. Moreover, the V_TH was carried at depending upon the high-k materials such as: SiO_2, HfO_2, ZrO_2, 〖Ta〗_2 O_2 and TiO_2 And the source/drain doping used are 〖2.5 m〗^(-1), 〖4 m〗^(-1), 〖6 m〗^(-1), 〖8 m〗^(-1), and 〖10 m〗^(-1) (~0.01 dopant/atom). Finally, a conclusion is made basing at the different findings which revealed that the best reduce of V_TH was recorded under a liquid Nitrogen temperature of 77 K.