Browsing by Author "Mazari, H."

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    Effect Of A Buffer Layer On The Performance Of Thin-film Cu(in,ga)se2 Solar Cells
    (Oum-El-Bouaghi University, 2014) Mostefaoui, M.; Mazari, H.; Khelifi, S.; Dabou, R.
    opper indium gallium diselenide (CuIn1-xGaxSe2 or CIGSe) solar cells has been considered to be one of the most promising thin-film solar cells and is important for terrestrial applications because of their high efficiency, long-term stable performance and potential for low-cost production. In this work, the CIGS heterojunction solar cell has been numerically simulated using SCAPS-1D tool. We study the influence of a buffer layer on the performance of the CIGSe solar cells. Quantum efficiency, Jsc ,Voc and efficiency has been calculated in different buffer layer materials (CdS, ZnS, ZnSe, InS).The solar cell optimized shows an efficiency of > 18% under the AM1.5G spectrum and one sun.
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    Optimization Of A Gaasn Ternary Alloy Based Solar Cell For High Efficiency
    (Oum-El-Bouaghi University, 2018) Ameur, Kheira; Mazari, H.; Benseddik, N.; Benamara, Z.; Benyahya, N.; Boumesjed, A.
    We report on the photovoltaic characteristics of solar cells based on GaAs1-xNx grown on gallium arsenide. The GaAsN is a recently developed novel solar cell material for its promising tunable band gap of 1.42 eV to 3.4 eV for the realization of high efficiency solar cells. We have conducted numerical simulation of GaAs1-xNx single junction solar cell. The doping density, layer thickness, and the stoichiometric coefficient are investigated for optimized performance of solar cell under solar illumination of AM1.5G. Thus starting from I-V curves, we have calculated the short-circuit current ICC, the open-circuit voltage VOC and the efficiency conversion. This structure can also provide a fundamental solar cell unit for developing very high efficiency MQW solar cell.
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    Predicted Theoretical Efficiency For New Intermediate Band Solar Cells (ibsc) Based On Gaas1-xnx
    (Oum-El-Bouaghi University, 2018) Boumesjed, Aicha; Mazari, H.; Ameur, K.; Benseddik, N.; Benamara, Z.; Benyahya, N.
    Intermediate band solar cells are one type of third generation photovoltaic devices. Indeed, the increase in the power conversion efficiency is achieved through the absorption of low energy photons while preserving a large band gap that determines the open circuit voltage [1]. The ability to absorb photons from different parts of the solar spectrum originates from the presence of an intermediate energy band located within the band gap of the material. This intermediate band, acting as a stepping stone allows the absorption of low energy photons to transfer electrons from the valence band to the conduction band by a sequential two photons absorption process. In This work, a numerical simulation is performed using Analysis of Microelectronic and Photonic Structure (AMPS) simulator to explore the possibility of higher efficiency of intermediate band sola cell (IBSC) based on GaAs1-xNx material (x=0.04). The doping density and layer thickness are investigated for optimized the performance of solar cell under solar illumination of AM1.5G. An 24.94% efficiency is determined for this new structure IBSC (GaAs0.96N0.04).