Browsing by Author "Bouazza, Benyounes"

Now showing 1 - 2 of 2
  • No Thumbnail Available
    Item
    Performance Study Of A Hemt For Power Application
    (Oum-El-Bouaghi University, 2015) Kourdi, Zakarya; Bouazza, Benyounes; Guen-bouazza, Ahlem; Khaouani, Mohamed
    In this paper, we present a simulation results of the design and characterization for GaN double-gate transistor, that has T-gate geometries with high-electron-mobility to realize high performance using silvaco TCAD Software, this transistor is used for amplifiers application. We have obtained an excellent current density, almost 817mA/mm, a peak extrinsic transconductance of 915mS/mm at VDS=2 V, and cutting frequency cutoffs of 878 GHz, and maximum frequency of 982 GHz. Keywords
  • No Thumbnail Available
    Item
    Temperature Variation Effects In Partially Depleted Soi N-channel Mosfets
    (Oum-El-Bouaghi University, 2015) Guen-bouazza, Ahlam; Bouazza, Benyounes; Benmoussat, Nassreddine; Rahou, Fatima; Sari, Nassreddine Chabane
    ilicon-on insulator (SOI) technology has attracted a great attention as a probable alternative candidate for low power, high performances applications. Nowadays electronic is subjected to temperature variations and is, some time, obliged to operate at high temperature. In this paper, based on some simulations results we obtained using ATLAS SILVACO TCAD software, we have investigate the impact of temperature variation on the electrical properties of a PD SOI n-MOSFET. This study allows us to highlight the existence of a ZTC point as well in the linear that in the saturated region. We also examine the off state leakage current dependence with temperature. At the end of this workself heating effects are also studied.