Browsing by Author "Benyahya, N."

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    Capacitance–frequency (c-v–f) And Conductance–frequency (g-v–f) Characteristics Of Au/n-gan Freestanding Schottky Structure
    (Oum-El-Bouaghi University, 2018) Mazari, Halima; Ameur, K.; Khelifi, R.; Mansouri, S.; Benseddik, N.; Benamara, Z.; Boumesjed, A.; Benyahya, N.; Marie, P.; Ruterana, P.; Monnet, I.; Bluet, J. M.; Bechare, R.
    In this paper, we have studied Au/n-GaN freestanding Schottky structures. The growth technique of GaN used is the HVPE (Hybrid Vapor Phase Epitaxy) method. The frequency dependent capacitance–voltage (C–V–f) and conductance–voltage (G–V–f) characteristics of Au/n-GaN freestanding/Ag Schottky diodes has been investigated in the frequency range of 100 Hz–1MHz at room temperature. The higher values of C and G at low frequencies were attributed to the native oxide layer thickness and surface states. From the C–f and G–f characteristics, the energy distribution of surface states (Nss) and their relaxation time (s) have been determined in the energy range of (Ec-0.648) eV– (Ec-1.35) eV taking into account the forward bias I–V data. The values of Nss and ss change from 6.18×1013 eV-1 cm-2 to 9.37×1012 eV-1 cm-2 and 6.3×10-4 s to 3.6×10-7 s, respectively.
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    Optimization Of A Gaasn Ternary Alloy Based Solar Cell For High Efficiency
    (Oum-El-Bouaghi University, 2018) Ameur, Kheira; Mazari, H.; Benseddik, N.; Benamara, Z.; Benyahya, N.; Boumesjed, A.
    We report on the photovoltaic characteristics of solar cells based on GaAs1-xNx grown on gallium arsenide. The GaAsN is a recently developed novel solar cell material for its promising tunable band gap of 1.42 eV to 3.4 eV for the realization of high efficiency solar cells. We have conducted numerical simulation of GaAs1-xNx single junction solar cell. The doping density, layer thickness, and the stoichiometric coefficient are investigated for optimized performance of solar cell under solar illumination of AM1.5G. Thus starting from I-V curves, we have calculated the short-circuit current ICC, the open-circuit voltage VOC and the efficiency conversion. This structure can also provide a fundamental solar cell unit for developing very high efficiency MQW solar cell.
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    Predicted Theoretical Efficiency For New Intermediate Band Solar Cells (ibsc) Based On Gaas1-xnx
    (Oum-El-Bouaghi University, 2018) Boumesjed, Aicha; Mazari, H.; Ameur, K.; Benseddik, N.; Benamara, Z.; Benyahya, N.
    Intermediate band solar cells are one type of third generation photovoltaic devices. Indeed, the increase in the power conversion efficiency is achieved through the absorption of low energy photons while preserving a large band gap that determines the open circuit voltage [1]. The ability to absorb photons from different parts of the solar spectrum originates from the presence of an intermediate energy band located within the band gap of the material. This intermediate band, acting as a stepping stone allows the absorption of low energy photons to transfer electrons from the valence band to the conduction band by a sequential two photons absorption process. In This work, a numerical simulation is performed using Analysis of Microelectronic and Photonic Structure (AMPS) simulator to explore the possibility of higher efficiency of intermediate band sola cell (IBSC) based on GaAs1-xNx material (x=0.04). The doping density and layer thickness are investigated for optimized the performance of solar cell under solar illumination of AM1.5G. An 24.94% efficiency is determined for this new structure IBSC (GaAs0.96N0.04).