Browsing by Author "Benkara, S."

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    Influence of Synthesis Conditions and Al doping, on structural and optical properties of ZnOSnO2 thin film
    (University of Oum El Bouaghi, 2021) Benkara, S.; Seghairi, N.; Bouabida, S.; Ghamri, H.
    Zn/Sn nanocomposite deposited on glace substrate by sol gel dip-coating technic, using Zinc acetate and tin chloride as precursors and aluminium chloride as dopping source, absolute ethanol and monoethanolamine (MEA) were used as the solvent and stabilizer, respectively. The quantity of tin in the solution was 0; 25; and 40 at.% Sn, and of aluminium was 0; 0,5; 2; and 4 at.% Al. The films are deposited at two dipping speeds: 100 mm/min and 50 mm/min, and used two dipping cycles: 10 and 5. The structure, optical properties and morphology of nanofilms and the influence of experimental parameters as withdrawal speed and dipping cycles on deposition of ZnO films were studied using X-Ray Diffraction (XRD), UV–vis spectroscopy and optical microscope. The crystalline phase determination from XRD confirmed that the films are composed of hexagonal wurtzite ZnO and tetragonal rutile SnO2 without compound impurities. The doping and dipping speed and cycles effect on optical bandgap is estimated by transmittance spectra.
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    Study of the performance of ballistic carbone nanotube FETs
    (Oum-El-Bouaghi University, 2011) Rechem, Dj.; Benkara, S.; Lamamra, K.
    Using a two-dimensional (2-D) simulation, we study the impact of varying the nanotube diameter and gate oxide thickness on the performance of a ballistic nanoscale carbon nanotube field effect transistor (CNTFET). Our results show that the nanotube diameter influences the ION/IOFF current ratio; the drain induced barrier lowering (DIBL), the subthreshold slop as well as transconductance and drain conductance. We also show that these device characteristics are affected by the gate oxide thickness. Thus, nanotube diameter and gate oxide thickness must be carefully taken into account when designing robust logic circuits based on CNTFETs with potentially high parameter variability.