Browsing by Author "Benchiheb, Asma"

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    Comparative Study Of Transistors Electrical Characteristics Made In Bicmos Technology
    (Oum-El-Bouaghi University, 2019) Benchiheb, Asma; Hobar, Farida
    In this paper, a comparative study of two bipolar transistors realized according to the same BICMOS-0.35 technology, but with two different architectures (self-aligned and quasi-self-aligned) is presented. In each case, the type of material forming the base and the geometric differences existing between the two considered structures are taken into account. The simulation allowed us to demonstrate the interest in introducing germanium in quasi-self-aligned bipolar transistors. In addition, it has been found that in low and medium injection, the electrical characteristics of the self-aligned bipolar transistor deviate greatly from the experimental results. With the quasi-self-aligned architecture, this gap remains moderate. In strong injection, and in both types of transistors, the electrical characteristics are very close to those obtained experimentally. copyright 03.03.2019
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    Effects of doping profile and temperature on the solar cell performances
    (University of Oum El Bouaghi, 2021) Benchiheb, Asma; Benchiheb, Nedjoua; Saidi, Yasmina
    In this paper, an optimization of the structure of a silicon solar cell is presented. This study takes into account the effects of temperature and doping level of each region of the device. As the simulation with the COMSOL software allowed us to demonstrate the link between the technological structure of an N + NP type solar cell and the various characteristics and parameters obtained at the output when it is subjected to a polarization. Thus, we considered different doping levels and thicknesses of the N + layer. It has been observed that the effects of temperature are negligible for low doping levels of the N + layer. However, in heavy doping, the benefit of reducing its thickness below 0.018 μm is demonstrated, especially for the high temperature operating range. Concerning the base, we observed that its thickness must be maintained in the order of 100 μm.